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11/2/10 IRLHM630PBF hexfet power mosfet notes through are on page 8
www.irf.com 1 3.3mm x 3.3mm pqfn 3 2 1 8 7 6 5 4 d d d d s s s g applications ? battery operated dc motor inverter mosfet ? secondary side synchronous rectification mosfet features and benefits v ds 30 v v gs max 12 v r ds(on) max (@v gs = 4.5v) 3.5 m r ds(on) max (@v gs = 2.5v) 4.5 m q g (typical) 41 nc i d (@t c(bottom) = 25c) 40 a note form quantit y irlhm630trpbf pqfn 3.3mm x 3.3mm ta p e and reel 4000 irlhm630tr2pbf pqfn 3.3mm x 3.3mm ta p e and reel 400 orderable part number package type standard pack absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 25c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 100c continuous drain current, v gs @ 4.5v i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear deratin g factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.7 0.022 37 max. 21 40 160 12 30 17 40 v w a c features benefits low r dson (<3.5m ) lower conduction losses low thermal resistance to pcb (<3.4c / w) enable better thermal dissipation low profile (<1.0mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturin g rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability

2 www.irf.com d s g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 2.1 ??? mv/c r ds ( on ) static drain-to-source on-resistance ??? 2.8 3.5 ??? 3.5 4.5 v gs ( th ) gate threshold voltage 0.5 0.8 1.1 v v gs ( th ) gate threshold voltage coefficient ??? -3.8 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 140 ??? ??? s q g total gate charge ??? 41 62 v ds = 14v q g s gate-to-source charge ??? 4.6 ??? q g d gate-to-drain charge ??? 14 ??? r g gate resistance ??? 2.6 ??? t d ( on ) turn-on delay time ??? 9.1 ??? t r rise time ??? 32 ??? t d ( off ) turn-off delay time ??? 65 ??? t f fall time ??? 43 ??? c iss input capacitance ??? 3170 ??? c oss output capacitance ??? 330 ??? c rss reverse transfer capacitance ??? 250 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 20 30 ns q r r reverse recovery charge ??? 30 45 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 50 a v gs = 2.5v, i d = 20a typ. m v dd = 15v, v gs = 4.5v ??? r g =1.0 v ds = 10v, i d = 20a v ds = 24v, v gs = 0v, t j = 125c a i d = 20a (see fig.17 & 18) i d = 20a v gs = 0v v ds = 25v v ds = 24v, v gs = 0v t j = 25c, i f = 20a, v dd = 10v di/dt = 400a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. conditions see fig.15 max. 80 20 ? = 1.0mhz conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 4.5v, i d = 20a ??? ??? 160 ??? ??? 40 mosfet symbol na ns a pf nc v gs = 4.5v ??? v gs = 12v v gs = -12v thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 3.4 r jc (top) junction-to-case ??? 37 c/w r ja junction-to-ambient ??? 46 r ja (<10s) junction-to-ambient ??? 31

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 1.0 1.5 2.0 2.5 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 20a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.6v 1.5v bottom 1.3v 60 s pulse width tj = 25c 1.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.6v 1.5v bottom 1.3v 60 s pulse width tj = 150c 1.3v

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 10ma 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc

www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 2 3 4 5 6 7 8 9 10 11 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 20a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.8a 11a bottom 20a

6 www.irf.com fig 16. for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' 1k vcc dut 0 l s

www.irf.com 7 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 3.3x3.3 outline package details pqfn 3.3x3.3 outline part marking

http://www.irf.com/technical-info/appnotes/an-1154.pdf 1 2 3 4 5 6 7 8

8 www.irf.com qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.40mh, r g = 50 , i as = 20a. pulse width 400 s; duty cycle 2%. r is measured at
when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to 40a by production test capability. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/2010 data and specifications subject to change without notice. pqfn 3.3x3.3 outline tape and reel reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. standard option (qty 4000) min 326.0 20.2 12.8 1.5 17.8 12.4 code a b c d e f g max 330.25 20.45 13.50 2.5 18.3 12.9 min 12.835 0.795 0.504 0.059 0.701 0.488 max 13.002 0.805 0.531 0.098 0.720 0.508 metric imperial 102.0 ref 4.016 ref dimensions min 7.90 3.90 11.70 5.45 3.50 3.50 0.25 1.10 code a b c d e f g h max 8.10 4.10 12.30 5.55 3.70 3.70 0.35 1.30 min 0.311 0.154 0.461 0.215 0.138 0.138 0.010 0.043 max 0.319 0.161 0.484 0.219 0.146 0.146 0.014 0.051 metric imperial msl1 (per jedec j-std-02 0d ??? ) rohs compliant yes pqfn 3.3mm x 3.3mm qualification information ? moisture sensitivity level qualification level industrial ?? (per jedec jesd47f ??? guidel ines )

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